SEMICONDUCTOR MEMORY DEVICE

There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes: a plurality of conductive layers stacked to be spaced apart from each other in a first direction; a channel hole extending in the first direction to penetrate the plurality of conductive layers; two or more channel patterns disposed to be spaced apart from each other along a sidewall of the channel hole; and two or more memory patterns disposed to be spaced apart from each other between the sidewall of the channel hole and the two or more channel patterns, respectively.