SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR

A semiconductor device includes: a substrate; a bit line positioned over the substrate and extending in a first direction; a first dielectric layer covering the bit line; a first channel layer positioned over the first dielectric layer; at least one word line positioned over the first channel layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUNG, Min Chul, KIM, Miri, KIM, Sei Yon
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes: a substrate; a bit line positioned over the substrate and extending in a first direction; a first dielectric layer covering the bit line; a first channel layer positioned over the first dielectric layer; at least one word line positioned over the first channel layer and extending in a second direction crossing the first direction; a second dielectric layer at least filling a space between adjacent word lines; a first contact coupled to the bit line by penetrating the second dielectric layer, the first channel layer, and the first dielectric layer; a third dielectric layer positioned over the word line, the second dielectric layer, and the first contact; and a second contact coupled to the first channel layer by penetrating the third dielectric layer and the second dielectric layer.