LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, which includes a substrate, an antireflection film provided on a backside of the substrate, a semiconductor layer including an n-type layer, a light emitting l...

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Bibliographische Detailangaben
Hauptverfasser:	OMOYA, Hideki, MAKINO, Hiroaki, MATSUI, Shinichi, MIZUTANI, Koichi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, which includes a substrate, an antireflection film provided on a backside of the substrate, a semiconductor layer including an n-type layer, a light emitting layer, and a p-type layer; a hole provided in a predetermined region of a surface of the p-type layer, a first p-electrode provided on the p-type layer, a first n-electrode provided on the n-type layer, a second p-electrode provided on the first p-electrode, a second n-electrode provided on the first n-electrode, and a protective film covering an entire upper surface of the element. The protective film includes: a first protective film made of an insulating material and a second protective film made of an insulating material having an internal stress other than that of the insulating material of the first protective film.