SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

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Bibliographische Detailangaben
Hauptverfasser:	ONO, Hiroshi, SHIMADA, Miyoko, MINAMIKAWA, Kento, KAJIWARA, Yosuke, KURAGUCHI, Masahiko, KATO, Daimotsu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1