INTEGRATED CIRCUIT DEVICE

An integrated circuit device includes fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, source/drain regions respectively arranged on the fin-type active regions, a device isolation film covering both sidewalls of each fin-type active regio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jo, Gunho, Cho, Eunho, Kim, Chulsung, Kim, Bomi, Kim, Heesub
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An integrated circuit device includes fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, source/drain regions respectively arranged on the fin-type active regions, a device isolation film covering both sidewalls of each fin-type active region, an insulating structure covering the source/drain regions and the device isolation film, source/drain contacts respectively arranged on and connected to the source/drain regions and apart from each other in a second horizontal direction perpendicular to the first horizontal direction, and a contact isolation insulating film arranged between the source/drain contacts in the second horizontal direction and having a lower surface closer to the substrate than a lower surface of each source/drain contact. At least one of the source/drain contacts includes a first portion extending in a vertical direction toward the substrate along a surface of the contact isolation insulating film.