NITRIDE SEMICONDUCTOR DEVICE

A nitride semiconductor device is provided. It includes a source electrode, a drain electrode, a gate electrode, a dielectric material layer and a stepped source field plate. The gate electrode is located between the source electrode and the drain electrode. The stepped source field plate is arrange...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG, Guanying, SUN, Xiguo, WANG, Zichen, LIANG, Yihang, LIU, Shenghou
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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