NITRIDE SEMICONDUCTOR DEVICE

A nitride semiconductor device is provided. It includes a source electrode, a drain electrode, a gate electrode, a dielectric material layer and a stepped source field plate. The gate electrode is located between the source electrode and the drain electrode. The stepped source field plate is arrange...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, Guanying, SUN, Xiguo, WANG, Zichen, LIANG, Yihang, LIU, Shenghou
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A nitride semiconductor device is provided. It includes a source electrode, a drain electrode, a gate electrode, a dielectric material layer and a stepped source field plate. The gate electrode is located between the source electrode and the drain electrode. The stepped source field plate is arranged in a part of the dielectric material layer and includes a first stepped portion and a second stepped portion respectively separated from a nitride epitaxial layer by different dielectric material layer thicknesses, and a part of the dielectric material layer between the stepped source field plate and the drain electrode is defined with a groove. By combining the stepped source field plate with the groove, parasitic capacitances Cgd and Cds are effectively reduced, the radio frequency (RF) gain of the device is improved, and the application bandwidth of the device is broadened.