INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING

An integrated circuit (IC) device includes a bottom semiconductor device, a top semiconductor device over the bottom semiconductor device in a thickness direction of the IC device, and a multilayer structure between the bottom semiconductor device and the top semiconductor device in the thickness direction. The multilayer structure includes a lower dielectric layer over the bottom semiconductor device, an upper dielectric layer over the lower dielectric layer, and an interlayer metal structure between the lower dielectric layer and the upper dielectric layer. The interlayer metal structure is electrically coupled to at least one of the bottom semiconductor device or the top semiconductor device.