Memory Circuitry And Methods Used In Forming Memory Circuitry

A method used in forming memory circuitry comprises forming transistors of individual memory cells. The transistors individually comprise one source/drain region and another source/drain region. The one and another source/drain regions comprise conductively-doped monocrystalline semiconductive material. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Masking material is formed directly above the one and another source/drain regions. The masking material has openings there-through that extend to and are individually directly above individual of the one source/drain regions. Conductively-doped monocrystalline semiconductor material is epitaxially grown from the conductively-doped monocrystalline semiconductive material of the individual one source/drain regions within individual of the openings to form conductive islands that are individually directly above and directly against the individual one source/drain regions in the individual openings. Storage elements of the individual memory cells are formed. The storage elements individually are above and electrically coupled to the individual one source/drain regions through individual of the conductive islands comprising the epitaxially-grown conductively-doped monocrystalline semiconductor material. Other embodiments, including structure, are disclosed.