SEMICONDUCTOR DEVICE WITH ELONGATED PATTERN

A semiconductor device includes a semiconductor substrate, a gate structure, a source/drain region, a source/drain contact, and a first conductive via. The gate structure is over the semiconductor substrate. The source/drain region is adjacent the gate structure. The source/drain contact is over the source/drain region. The first conductive via is over the source/drain contact. From a top view, the first conductive via has two opposite first long sides and two opposite first short sides connecting the first long sides, and the first short sides are shorter than the first long sides and more curved than the first long sides. From a cross-sectional view, the first long sides of the first conductive via have bottom segments higher than a top surface of the gate structure.