Interconnect Structure of Semiconductor Device

A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric lay...

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Bibliographische Detailangaben
Hauptverfasser: Tsai, Chia-Ching, Hsu, Li-Te, Chiu, Yi-Wei
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.