OVERLAY MEASUREMENT APPARATUS AND OVERLAY MEASUREMENT METHOD

Disclosed is an overlay measurement apparatus which may include: a light source unit configured to direct an illumination to an overlay measurement target formed in a wafer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at a measurement posi...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI, Seong Yun, HAM, Hyo Sik
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Disclosed is an overlay measurement apparatus which may include: a light source unit configured to direct an illumination to an overlay measurement target formed in a wafer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at a measurement position; a stage on which the wafer is seated; and a control unit controlling the lens unit to acquire the overlay measurement target, processing a first sample image of the overlay measurement target detected by the detection unit and a second sample image rotated at 180 degrees based on the first sample image and detected, and calculating a difference between the processed images to calculate the difference as a correction image for correcting an image for which overlay is measured.