NOVEL HAFNIUM-CONTAINING COMPOUND, HAFNIUM PRECURSOR COMPOSITION CONTAINING SAME, HAFNIUM-CONTAINING THIN FILM USING HAFNIUM PRECURSOR COMPOSITION, AND PREPARATION METHOD THEREFOR

The present invention relates to a hafnium-containing precursor that can be used in the formation of various hafnium-containing thin films, wherein the hafnium-containing precursor is liquid at room temperature and exhibits high volatility and high thermal stability and thus can be used in a high-qu...

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Bibliographische Detailangaben
Hauptverfasser:	KWON, Chul Hee, LEE, Doo Hun, SHIN, Hyung Soo, KIM, Hyun Chang
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a hafnium-containing precursor that can be used in the formation of various hafnium-containing thin films, wherein the hafnium-containing precursor is liquid at room temperature and exhibits high volatility and high thermal stability and thus can be used in a high-quality hafnium-containing thin film and a preparation method therefor.