LAYER STACKS FOR A RESISTIVE MEMORY ELEMENT

Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed betwe...

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Bibliographische Detailangaben
Hauptverfasser:	Hsieh, Curtis Chun-I, Yi, Wanbing, Sun, Yongshun, Kang, Kai, Tan, Juan Boon, Toh, Eng-Huat
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed between the second electrode and the first electrode. The first electrode includes a first layer and a second layer between the first layer and the switching layer. The switching layer has a first thickness, and the second layer of the first electrode has a second thickness that is less than the first thickness of the switching layer.