Ka-BAND GALLIUM-NITRIDE (GaN) MONOLITHIC-MICROWAVE INTEGRATED CIRCUIT (MMIC) POWER AMPLIFIER CIRCUIT AND AMPLIFIER

The present disclosure provides a Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit and an amplifier, and belongs to the field of MMIC amplifiers. The circuit includes: a plurality of cascade-connected amplification modules. A first amplification mo...

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Bibliographische Detailangaben
Hauptverfasser: Jiao, Xuelong, Cui, Zhaotan, Qu, Hanbin, Ren, Zhipeng, Wang, Yu, DU, Pengbo
Format: Patent
Sprache:eng
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Zusammenfassung:The present disclosure provides a Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit and an amplifier, and belongs to the field of MMIC amplifiers. The circuit includes: a plurality of cascade-connected amplification modules. A first amplification module includes a first amplification unit, and each of the other amplification modules includes a matching network unit and an amplification unit. A microstrip line ML1 in matching network unit includes one terminal connected to an output terminal of a front-stage amplification unit and the other terminal connected to one terminal of a microstrip line ML2 and one terminal of a capacitor C1. The other terminal of the microstrip line ML2 is connected to an input terminal of a current amplification unit. The other terminal of the capacitor C1 is grounded.