SOLID-STATE AMORPHOUS SELENIUM AVALANCHE DETECTOR WITH HOLE BLOCKING LAYER

SOLID-STATE AMORPHOUS SELENIUM AVALANCHE DETECTOR WITH HOLE BLOCKING LAYER

A solid-state photomultiplier with a high-k dielectric hole blocking layer (HBL) is provided. The HBL may include a n-type material. The photomultiplier may comprise an amorphous selenium (a-Se) bulk layer. The HBL may be a non-insulating layer. The photomultiplier may also comprise an electron bloc...

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Bibliographische Detailangaben
Hauptverfasser: HOWANSKY, Adrian, HO, Le Thanh Triet, SIDDONS, D. Peter, ZHAO, Wei, GOLDAN, Amirhossein, STAVRO, Jann, LUBINSKY, Anthony R, MUKHERJEE, Atreyo, RUMAIZ, Abdul Khader
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A solid-state photomultiplier with a high-k dielectric hole blocking layer (HBL) is provided. The HBL may include a n-type material. The photomultiplier may comprise an amorphous selenium (a-Se) bulk layer. The HBL may be a non-insulating layer. The photomultiplier may also comprise an electron blocking layer (EBL). The EBL may comprise a p-type material. The p-type material may also have a high k dielectric. The a-Se layer may be sandwiched between the HBL and the EBL. Methods for manufacturing a solid-state photomultiplier are also provided.