ATOMIC LAYER DEPOSITION APPARATUS

An atomic layer deposition apparatus includes a source gas supply part that supplies multiple source gases, a source gas supply module connected to the source gas supply part, a reaction gas supply part that supplies a reaction gas, a reaction gas supply module connected to the reaction gas supply p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SEO, Jaehee, BAE, CHULMIN, JEON, WOO-SEOK
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An atomic layer deposition apparatus includes a source gas supply part that supplies multiple source gases, a source gas supply module connected to the source gas supply part, a reaction gas supply part that supplies a reaction gas, a reaction gas supply module connected to the reaction gas supply part and spaced apart from the source gas supply module in a first direction, and a first purge gas supply module disposed between the source gas supply module and the reaction gas supply module.