RESIN COMPOSITION FOR ENCAPSULATION AND SEMICONDUCTOR DEVICE

Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cu...

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Bibliographische Detailangaben
Hauptverfasser:	YOKOTA, Ryuhei, OSADA, Shoichi, KAWAMURA, Norifumi, HORIGOME, Hiroki, HAGIWARA, Kenji
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.