SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bott...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Yi-Hui, Wang, Hui-Lin, Shih, Yi-An, Hsieh, Chin-Yang, Weng, Chen-Yi, Wang, Tu-Ping, Tseng, Yi-Wei, Jhang, Jing-Yin, Liu, Ying-Cheng, Tseng, I-Ming
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.