THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINERS AND METHODS OF FORMING THE SAME

A method of making a memory device includes forming an alternating stack of insulating layers and sacrificial material layers, where a silicon oxycarbide liner is interposed between a first sacrificial material layer and a first insulating layer, and the first sacrificial material layer is direct contact with a second insulating layer or a dielectric material layer composed of a silicon oxide material, forming a memory opening through the alternating stack, forming a memory opening fill structure in the memory opening, forming backside recesses by removing the sacrificial material layers selective to the silicon oxycarbide liner, and forming electrically conductive layers in the backside recesses.