BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE

This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are...

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Hauptverfasser: YAMADA, Hideaki, MATSUMAE, Takashi, IMAMURA, Ken, KURASHIMA, Yuuichi, CHAYAHARA, Akiyoshi, SHIRAYANAGI, Yusuke, NISHIMURA, Kunihiko, HIGURASHI, Eiji, TAKAGI, Hideki, HIZA, Shuichi, YOSHITSUGU, Koji, MOKUNO, Yoshiaki
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creator YAMADA, Hideaki
MATSUMAE, Takashi
IMAMURA, Ken
KURASHIMA, Yuuichi
CHAYAHARA, Akiyoshi
SHIRAYANAGI, Yusuke
NISHIMURA, Kunihiko
HIGURASHI, Eiji
TAKAGI, Hideki
HIZA, Shuichi
YOSHITSUGU, Koji
MOKUNO, Yoshiaki
description This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024258195A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024258195A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024258195A13</originalsourceid><addsrcrecordid>eNqNjrEKwjAQhrs4iPoOB64KWi3omCYXmyG5kqSUTqVInEQL9QF9NFNwcBB0uuO-7_67afLMyQgUkJNogJMurXLKnECTY4qDUExHAWom0QKLnUOteBxV3JMFklGRkaHx4JsSV6DRFyRARlpait4Y55iOaNz_GjzKlUNQBj7_qZUvfh2cJ5NLdx3C4l1nyVKi58U69Pc2DH13DrfwaCuXbtJ9mh22x4xtd_9ZL0cfTeg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE</title><source>esp@cenet</source><creator>YAMADA, Hideaki ; MATSUMAE, Takashi ; IMAMURA, Ken ; KURASHIMA, Yuuichi ; CHAYAHARA, Akiyoshi ; SHIRAYANAGI, Yusuke ; NISHIMURA, Kunihiko ; HIGURASHI, Eiji ; TAKAGI, Hideki ; HIZA, Shuichi ; YOSHITSUGU, Koji ; MOKUNO, Yoshiaki</creator><creatorcontrib>YAMADA, Hideaki ; MATSUMAE, Takashi ; IMAMURA, Ken ; KURASHIMA, Yuuichi ; CHAYAHARA, Akiyoshi ; SHIRAYANAGI, Yusuke ; NISHIMURA, Kunihiko ; HIGURASHI, Eiji ; TAKAGI, Hideki ; HIZA, Shuichi ; YOSHITSUGU, Koji ; MOKUNO, Yoshiaki</creatorcontrib><description>This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240801&amp;DB=EPODOC&amp;CC=US&amp;NR=2024258195A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240801&amp;DB=EPODOC&amp;CC=US&amp;NR=2024258195A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMADA, Hideaki</creatorcontrib><creatorcontrib>MATSUMAE, Takashi</creatorcontrib><creatorcontrib>IMAMURA, Ken</creatorcontrib><creatorcontrib>KURASHIMA, Yuuichi</creatorcontrib><creatorcontrib>CHAYAHARA, Akiyoshi</creatorcontrib><creatorcontrib>SHIRAYANAGI, Yusuke</creatorcontrib><creatorcontrib>NISHIMURA, Kunihiko</creatorcontrib><creatorcontrib>HIGURASHI, Eiji</creatorcontrib><creatorcontrib>TAKAGI, Hideki</creatorcontrib><creatorcontrib>HIZA, Shuichi</creatorcontrib><creatorcontrib>YOSHITSUGU, Koji</creatorcontrib><creatorcontrib>MOKUNO, Yoshiaki</creatorcontrib><title>BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE</title><description>This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjrEKwjAQhrs4iPoOB64KWi3omCYXmyG5kqSUTqVInEQL9QF9NFNwcBB0uuO-7_67afLMyQgUkJNogJMurXLKnECTY4qDUExHAWom0QKLnUOteBxV3JMFklGRkaHx4JsSV6DRFyRARlpait4Y55iOaNz_GjzKlUNQBj7_qZUvfh2cJ5NLdx3C4l1nyVKi58U69Pc2DH13DrfwaCuXbtJ9mh22x4xtd_9ZL0cfTeg</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>YAMADA, Hideaki</creator><creator>MATSUMAE, Takashi</creator><creator>IMAMURA, Ken</creator><creator>KURASHIMA, Yuuichi</creator><creator>CHAYAHARA, Akiyoshi</creator><creator>SHIRAYANAGI, Yusuke</creator><creator>NISHIMURA, Kunihiko</creator><creator>HIGURASHI, Eiji</creator><creator>TAKAGI, Hideki</creator><creator>HIZA, Shuichi</creator><creator>YOSHITSUGU, Koji</creator><creator>MOKUNO, Yoshiaki</creator><scope>EVB</scope></search><sort><creationdate>20240801</creationdate><title>BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE</title><author>YAMADA, Hideaki ; MATSUMAE, Takashi ; IMAMURA, Ken ; KURASHIMA, Yuuichi ; CHAYAHARA, Akiyoshi ; SHIRAYANAGI, Yusuke ; NISHIMURA, Kunihiko ; HIGURASHI, Eiji ; TAKAGI, Hideki ; HIZA, Shuichi ; YOSHITSUGU, Koji ; MOKUNO, Yoshiaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024258195A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMADA, Hideaki</creatorcontrib><creatorcontrib>MATSUMAE, Takashi</creatorcontrib><creatorcontrib>IMAMURA, Ken</creatorcontrib><creatorcontrib>KURASHIMA, Yuuichi</creatorcontrib><creatorcontrib>CHAYAHARA, Akiyoshi</creatorcontrib><creatorcontrib>SHIRAYANAGI, Yusuke</creatorcontrib><creatorcontrib>NISHIMURA, Kunihiko</creatorcontrib><creatorcontrib>HIGURASHI, Eiji</creatorcontrib><creatorcontrib>TAKAGI, Hideki</creatorcontrib><creatorcontrib>HIZA, Shuichi</creatorcontrib><creatorcontrib>YOSHITSUGU, Koji</creatorcontrib><creatorcontrib>MOKUNO, Yoshiaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMADA, Hideaki</au><au>MATSUMAE, Takashi</au><au>IMAMURA, Ken</au><au>KURASHIMA, Yuuichi</au><au>CHAYAHARA, Akiyoshi</au><au>SHIRAYANAGI, Yusuke</au><au>NISHIMURA, Kunihiko</au><au>HIGURASHI, Eiji</au><au>TAKAGI, Hideki</au><au>HIZA, Shuichi</au><au>YOSHITSUGU, Koji</au><au>MOKUNO, Yoshiaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE</title><date>2024-08-01</date><risdate>2024</risdate><abstract>This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.</abstract><oa>free_for_read</oa></addata></record>
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subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE
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