BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DIFFERENT TYPE, METHOD FOR PRODUCING SAME, AND MOSAIC DIAMOND WAFER FOR USE IN BONDED BODY WITH SEMICONDUCTOR OF DIFFERENT TYPE

This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are...

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Bibliographische Detailangaben
Hauptverfasser:	YAMADA, Hideaki, MATSUMAE, Takashi, IMAMURA, Ken, KURASHIMA, Yuuichi, CHAYAHARA, Akiyoshi, SHIRAYANAGI, Yusuke, NISHIMURA, Kunihiko, HIGURASHI, Eiji, TAKAGI, Hideki, HIZA, Shuichi, YOSHITSUGU, Koji, MOKUNO, Yoshiaki
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.