SILICON ETCHING SOLUTION, METHOD OF TREATING SILICON SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A silicon etching solution containing an organic alkaline compound and water, the silicon etching solution further containing a compound represented by Formula (1) below, wherein a content of the compound represented by Formula (1) is 100 mass ppm or more:where R1 is a single bond or a hydrocarbon group having carbon number from 1 to 5, R2 and R3 are each independently a hydrogen atom, a halogen atom, a hydroxy group, an amino group, an acetyl group, a carboxy group, a silyl group, a boryl group, a nitrile group, a thio group, a seleno group, or a hydrocarbon group having carbon number from 1 to 10, and these groups optionally further have a substituent.