SiC SEMICONDUCTOR DEVICE

SiC SEMICONDUCTOR DEVICE

A SiC semiconductor device including a SiC semiconductor layer composed of SiC single crystal. The SiC semiconductor layer comprising a mounted surface on which an element is mounted, a non-mounted surface opposed to the mounted surface, and a side surface connecting the mounted surface to the non-m...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KITAICHI, Mitsuru, TAKEDA, Masakazu, ASAI, Yoshiyuki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A SiC semiconductor device including a SiC semiconductor layer composed of SiC single crystal. The SiC semiconductor layer comprising a mounted surface on which an element is mounted, a non-mounted surface opposed to the mounted surface, and a side surface connecting the mounted surface to the non-mounted surface, wherein the side surface is on a cleavage plane of the SiC single crystal.