METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device includes forming a first organic insulating layer including a groove; forming a conductive layer formed from a conductive material on the first organic insulating layer to fill the groove with the conductive material; removing a portion of the conductive layer on the first organic insulating layer, and acquiring a first wiring structure including a first wiring layer and the first organic insulating layer; providing a second wiring structure including a second organic insulating layer and a second wiring layer; and stacking the first wiring structure and the second wiring structure by pressurizing them while performing alignment so that the first wiring layer and the second wiring layer correspond to each other. In the stacking, the first wiring layer and the second wiring layer are joined, and the first organic insulating layer and the second organic insulating layer are joined to each other.