VIA FOR SEMICONDUCTOR DEVICE CONNECTION

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Wu, Tsang-Jiuh, Yu, Chen-Hua, Chiou, Wen-Chih, Su, An-Jhih, Yeh, Ming Shih, Wu, Chi-Hsi, Yeh, Der-Chyang
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.