EXHAUST GAS PROCESSING APPARATUS HAVING PLASMA SOURCE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to...

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Bibliographische Detailangaben
Hauptverfasser: Heo, Young, Gim, Suji, Yook, Sunwoo, KIM, JAEHYUN, Ann, Kookjin, Sung, Taijong
Format: Patent
Sprache:eng
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Zusammenfassung:An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.