REMOVABLE MASK LAYER TO REDUCE OVERHANG DURING RE-SPUTTER PROCESS IN PVD CHAMBERS

Apparatus and methods for processes of depositing a film on a substrate in an electronic device fabrication process are provided herein, and more particularly, apparatus and methods for improving deposited film uniformity within high aspect ratio features. In some embodiments, a metal layer depositi...

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Bibliographische Detailangaben
Hauptverfasser: HOU, Wenting, LEI, Jianxin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Apparatus and methods for processes of depositing a film on a substrate in an electronic device fabrication process are provided herein, and more particularly, apparatus and methods for improving deposited film uniformity within high aspect ratio features. In some embodiments, a metal layer deposition process is performed to deposit a metal layer in a feature definition formed in a substrate. A mask layer deposition process is performed to deposit a carbon layer on the metal layer. Following the mask layer deposition process, a resputtering process is performed by applying a radio frequency (RF) signal to the substrate in a presence of an inert gas. Following performing the resputtering process, an etching process is performed to remove the carbon.