SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

A semiconductor device includes a substrate having an active element region and a passive element region. A compound semiconductor channel layer, a compound semiconductor barrier layer and a first compound semiconductor cap layer are disposed in sequence on the substrate and located in the active element region. A gate electrode is disposed on the first compound semiconductor cap layer. A source electrode and a drain electrode are disposed on the compound semiconductor barrier layer and located on two opposite sides of the gate electrode, respectively, to construct a high electron mobility transistor. A second compound semiconductor cap layer is disposed on the substrate and located in the passive element region to construct a resistor.