NITROGEN-CONTAINING AROMATIC OR RING STRUCTURE MOLECULES FOR PLASMA ETCH AND DEPOSITION

A method for forming a substantially vertical structure comprises: exposing a substrate to a vapor of an additive comprising a nitrogen-containing cyclic compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film, activating a plasma to produce an activated nitrogen-containing cyclic compound, and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated nitrogen-containing cyclic compound to selectively etch the film from the patterned mask layer, thereby forming the substantially vertical structure, wherein the nitrogen-containing cyclic compound reduces a charge that builds up along sidewalls of the substantially vertical structure forming a conductive sidewall passivation layer on the sidewalls thereof. A method of depositing a conductive polymer layer on a substrate and a cyclic method are also disclosed.