DEVICE FOR CONTROLLING TRAPPED IONS

A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a s...

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Bibliographische Detailangaben
Hauptverfasser: Ballance, Chris, Rössler, Clemens, Matthiesen, Clemens
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.