APPARATUS AND METHOD FOR MEASURING A LAYER OF A SEMICONDUCTOR DEVICE USING X-RAY DIFFRACTION

APPARATUS AND METHOD FOR MEASURING A LAYER OF A SEMICONDUCTOR DEVICE USING X-RAY DIFFRACTION

An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lee, Seungchul, Sohn, Younghoon
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the X-rays diffracted from the specimen.