SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor devices and methods for fabricating semiconductor devices are disclosed. In some implementations, a semiconductor device may include a first electrode layer; a second electrode layer disposed over the first electrode layer and spaced apart from the first electrode layer; and a selector layer disposed between the first electrode layer and the second electrode layer and including an insulating material that contains at least a dopant and carbon, wherein a carbon concentration at a first portion of the selector layer adjacent to the second electrode layer is higher than a carbon concentration at a second portion of the selector layer adjacent to the first electrode layer.