METHOD FOR MANUFACTURING AN ELECTRONIC POWER DEVICE, AND DEVICE OBTAINED BY THIS METHOD
A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first con...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N. |
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