SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device comprises a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern on the channel pattern, a gate electrode on the channel pattern, and a gate dielectric layer between the channel pattern and the gate electrode. The gate electrode includes an inner electrode between neighboring first and second semiconductor patterns. The gate dielectric layer includes a high-k dielectric layer that surrounds the inner electrode of the gate electrode and an inner spacer on the high-k dielectric layer. The inner spacer includes a first horizontal part between the high-k dielectric layer and the second semiconductor pattern, a first vertical part between the high-k dielectric layer and the source/drain pattern, and a first corner part that connects the first horizontal part to the first vertical part.