IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Image sensors and fabrication methods thereof are provided. An image sensor includes a semiconductor substrate including pixel regions, and a fence structure that defines openings that correspond to the pixel regions. A fence structure includes a metal pattern on the semiconductor substrate, a low-r...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIM, Haji, RYU, Je-Hyung, JEON, Taeksoo, HUR, Jaesung, JEON, Jongmin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Image sensors and fabrication methods thereof are provided. An image sensor includes a semiconductor substrate including pixel regions, and a fence structure that defines openings that correspond to the pixel regions. A fence structure includes a metal pattern on the semiconductor substrate, a low-refractive pattern on the metal pattern, and a metal oxide pattern between the metal pattern and the low-refractive pattern.