DISPLAY DEVICE

A display device according to an exemplary aspect of the present disclosure includes a substrate divided into an active area and a non-active area including a gate-in-panel (GIP) area, a planarization layer disposed over the substrate and extending to the non-active area, a bank disposed over the planarization layer and extending to the non-active area, an encapsulation layer disposed over the bank and a hydrogen absorption layer disposed between the bank and the planarization layer to cover the GIP area, so that it is possible to improve characteristics and reliability of an oxide thin film transistor by blocking introduction of hydrogen into the oxide thin film transistor of a GIP circuit.