FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

An apparatus, comprising a field effect transistor comprising a ferroelectric material, a channel material comprising a transition metal and a chalcogen, a source and a drain coupled to the channel material, the source and drain comprising a conductive material.

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Bibliographische Detailangaben
Hauptverfasser: Debashis, Punyashloka, Steinhardt, Rachel A, Young, Ian Alexander, Nikonov, Dmitri Evgenievich, Plombon, John J, Ryu, Hojoon, O'Brien, Kevin P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An apparatus, comprising a field effect transistor comprising a ferroelectric material, a channel material comprising a transition metal and a chalcogen, a source and a drain coupled to the channel material, the source and drain comprising a conductive material.