WIDE BASED HIGH VOLTAGE BIPOLAR JUNCTION TRANSISTOR WITH BURIED COLLECTORS AS HYBRID IGBT BUILDING BLOCK

A high voltage bipolar junction transistor (BJT) enables package integration with a MOSFET as a base driver for the BJT in the same package. The BJT may include a wide base to block the high voltage with a lightly doped wide-base region rather than in a lightly doped collector region. Collector regi...

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Bibliographische Detailangaben

1. Verfasser:	Yilmaz, Hamza
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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