WIDE BASED HIGH VOLTAGE BIPOLAR JUNCTION TRANSISTOR WITH BURIED COLLECTORS AS HYBRID IGBT BUILDING BLOCK

A high voltage bipolar junction transistor (BJT) enables package integration with a MOSFET as a base driver for the BJT in the same package. The BJT may include a wide base to block the high voltage with a lightly doped wide-base region rather than in a lightly doped collector region. Collector regions of the BJT may be buried and additional floating collector regions may underly the buried collector regions. The package integration allows the MOSFET and the BJT to be fabricated using separately optimized semiconductor materials and processing while providing the operation of a power IGBT with higher performance.