ELECTROSTATIC DISCHARGE PROTECTION DEVICE

An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes first and second N-type deep well (DNW) regions in a P-type semiconductor substrate, first to fourth N-type and P-type doped regions, and first and second P-type well (PW) regions. The fi...

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Bibliographische Detailangaben
1. Verfasser:	CHEN, Ke-Yuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes first and second N-type deep well (DNW) regions in a P-type semiconductor substrate, first to fourth N-type and P-type doped regions, and first and second P-type well (PW) regions. The first N-type and P-type doped regions and the first PW region are located in the first DNW region. The second N-type and P-type doped regions and the second PW region are located in the second DNW region. The third and fourth N-type and P-type doped regions are located in the first and second PW regions. The first P-type and fourth N-type doped regions are connected to an input/output terminal. The first N-type and second P-type doped regions are connected to a power supply terminal. The third N-type and the fourth P-type doped regions are connected to a ground terminal.