SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME

A semiconductor device comprising: a stack structure on a substrate including gate electrodes and insulating layers alternately stacked; a first through via extending through the stack structure; and a second through via spaced apart from the first through via, wherein the second through via extends through the stack structure, wherein the second through via is electrically connected to a first gate electrode that is farthest one among the gate electrodes from the substrate in the vertical direction, wherein a gate pad is on and contacts the first gate electrode, and the first through via includes: a vertical pattern; first and second protrusions that protrude from the vertical pattern, wherein the first protrusion overlaps a portion of the first gate electrode in the horizontal direction; and the second protrusion overlaps a second gate electrode in the horizontal direction, wherein the second gate electrode is spaced apart from the second through via.