SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

A technique is provided to perform: (a) forming a first film exerting a predetermined adhesive force on an inner surface of a concave structure formed on a surface of a substrate by supplying a first source gas to the substrate; and (b) forming a second film exerting an adhesive force smaller than t...

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Bibliographische Detailangaben
Hauptverfasser:	AKAE, Naonori, SHIMIZU, Tomiyuki, OZAKI, Takashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A technique is provided to perform: (a) forming a first film exerting a predetermined adhesive force on an inner surface of a concave structure formed on a surface of a substrate by supplying a first source gas to the substrate; and (b) forming a second film exerting an adhesive force smaller than that of the first film on the first film by supplying a second source gas to the substrate.