MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Disclosed is a method of operating a memory device including a memory cell array. The memory cell array includes a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells. The method includes performing an additional read operation on the plurality of memory cells by adjusting a voltage level applied to a selected word line WLN connected to memory cells to be additionally read for improvements in memory cell sensing characteristics and a voltage level applied to a plurality of unselected word lines WLUnselect, and performing a main read operation on the plurality of memory cells by adjusting a voltage level applied to at least one first word line among the plurality of unselected word lines WLUnselect to be different from a voltage level applied to the at least one first word line in the additional read operation.