INTEGRATED NANOSHEET MEMORY ELEMENTS, DEVICES AND METHODS

INTEGRATED NANOSHEET MEMORY ELEMENTS, DEVICES AND METHODS

A memory element and method of formation is disclosed that includes a transistor integrated with a capacitor through a common nanosheet. The transistor includes a channel, a source region, a drain region and a gate component on at least one side of the channel between the source region and drain reg...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Fulford, H. Jim, Gardner, Mark I
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A memory element and method of formation is disclosed that includes a transistor integrated with a capacitor through a common nanosheet. The transistor includes a channel, a source region, a drain region and a gate component on at least one side of the channel between the source region and drain region. The channel is formed in a first portion of a nanosheet. The capacitor has a first capacitor component and second capacitor component separated by an insulator. The first capacitor component is provided in a second portion of the nanosheet.