METHOD FOR MANUFACTURING MICRO-LEDS

Method for manufacturing micro-LEDs comprising the following steps:i) providing a stack comprising at least one strongly n-doped GaN layer (104), an n-doped GaN layer (105), quantum wells (106) and a p-doped GaN layer (107),ii) porosifying the GaN layer (104), to obtain a porosified GaN layer (104′)...

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Bibliographische Detailangaben
Hauptverfasser:	PERNEL, Carole, SIMON, Julia, AVENTURIER, Bernard, ALTAZIN, Stéphane, MICHIT, Nicolas, DE MARTINO, Paolo, LEVY, François
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Method for manufacturing micro-LEDs comprising the following steps:i) providing a stack comprising at least one strongly n-doped GaN layer (104), an n-doped GaN layer (105), quantum wells (106) and a p-doped GaN layer (107),ii) porosifying the GaN layer (104), to obtain a porosified GaN layer (104′),iii) forming mesas in the stack,iv) covering the porosified GaN layer (104′) with a second electrode (301) or with an encapsulation layer (302), the second electrode (301) or the encapsulation layer (302) being in direct contact with the porosified GaN layer (104′).step ii) being carried out so that the optical index of the porosified GaN layer (104′) does not vary by more than 10% with respect to the optical index of the second electrode (301) and/or with respect to the optical index of the encapsulation layer (302).