III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE

III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE

A microelectronic device includes a III-N semiconductor layer having a top surface with at least one topological structure in the III-N semiconductor layer. The topological structure may be an opening in the III-N semiconductor layer or a protrusion of the III-N semiconductor layer. The microelectro...

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Bibliographische Detailangaben
Hauptverfasser: Eshun, Ebenezer, Garrett, Jonathan R, Joh, Jungwoo, Wang, Fuchao, Wofford, Bill
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A microelectronic device includes a III-N semiconductor layer having a top surface with at least one topological structure in the III-N semiconductor layer. The topological structure may be an opening in the III-N semiconductor layer or a protrusion of the III-N semiconductor layer. The microelectronic device also includes a liner including silicon nitride on the topological structure, contacting the III-N semiconductor layer. The microelectronic device further includes a fill material including silicon nitride on the topological structure on the liner. A top surface of the fill material is planar and parallel to the top surface of the III-N semiconductor layer adjacent to the topological structure.