Nonlinear Gate Vertical Transistor
A trench transistor with nonlinear gate-oxide-semiconductor boundary layout, and method of manufacture is provided. The trench transistor includes a gate region, an oxide region adjacent to the gate region, and a semiconductor region adjacent to the oxide region. The semiconductor region includes a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A trench transistor with nonlinear gate-oxide-semiconductor boundary layout, and method of manufacture is provided. The trench transistor includes a gate region, an oxide region adjacent to the gate region, and a semiconductor region adjacent to the oxide region. The semiconductor region includes a channel region along a gate-oxide-semiconductor boundary. The channel region is configured to conduct current along the gate-oxide-semiconductor boundary when the transistor is turned on. The gate-oxide-semiconductor boundary has a nonlinear shape. |
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