ELECTROSTATIC DISCHARGE PROTECTION DEVICES

Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a first well and a second well in the semiconductor substrate. The first and second wells have a first conductivity type. The structure further comprises a third well and a fourth well in...

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Bibliographische Detailangaben
Hauptverfasser: Karalkar, Sagar Premnath, Krishnasamy, Rajendran, Gauthier, JR., Robert J, Gebreselasie, Ephrem, Mitra, Souvick
Format: Patent
Sprache:eng
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Zusammenfassung:Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a first well and a second well in the semiconductor substrate. The first and second wells have a first conductivity type. The structure further comprises a third well and a fourth well in the semiconductor substrate. The third and fourth wells have a second conductivity type, the third well includes a portion that overlaps with the first well, and the fourth well includes a portion that overlaps with the second well.