VIA CONNECTION TO A PARTIALLY FILLED TRENCH

VIA CONNECTION TO A PARTIALLY FILLED TRENCH

An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on the first dielectric layer, and a via connecting the first metal feature to the second meta...

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Bibliographische Detailangaben
Hauptverfasser: Shue, Shau-Lin, Gau, Tsai-Sheng, Bao, Tien-I, Chang, Shih-Ming, Lai, Chih-Ming, Liu, Ru-Gun, Lee, Chung-Ju
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on the first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.